*** Power Discrete Bipolar Electrical Parameter ***

** Power Amplifier Transistor

** Product: 2N5551 / TO-92



.MODEL 2N5551 npn

+ IS     = 2.04174E-14     BF     = 122.7           NF     = 1                  

+ BR     = 17.075          NR     = 1               ISE    = 5.7544E-13         

+ NE     = 2               ISC    = 2.29087E-11     NC     = 1.5                

+ VAF    = 176.831         VAR    = 35.3            IKF    = 0.144627           

+ IKR    = 0.0158489       RB     = 125             RBM    = 8.092              

+ IRB    = 1.12202E-7      RE     = 0.14            RC     = 1.8                

+ CJE    = 2.450889E-11    VJE    = 0.7175263       MJE    = 0.3413777          

+ FC     = 0.5             CJC    = 5.03462E-12     VJC    = 0.5                

+ MJC    = 0.3226407       XTB    = 1.2776          EG     = 1.2222             

+ XTI    = 3               TF     = 1.73E-11                                         



* Creation : Sep.-24-2004 

* Fairchild Semiconductor