12/04/2017-17:48:45
RE: Kits Kaneda
Maintenant, les deux traductions des sommaires des articles du Kanéda No. 225 dont nous parlons souvent aussi (MJ no. 1082 et 1083). Il s'agit de deux textes extrêmement intéressants, car ils nous permettent de comprendre les améliorations entre le 224 et le 225:
DC Amplifier Series No.225
All FET configuration, 8 Ω load 180 W x 2, 4 Ω load 306 W, SiC rectified power supply
SiC MOS-FET High Power IVC [Part 1] Akihiko Kaneda
It is a system that improves the driver stage as expected. In No. 224 the distortion rate of 10 kHz was worse than that of 1 kHz. The reason for this is that in the source follower configuration of the driver stage, the Rs is too small, the charging current of the last stage Ciss flows to the Rs side, and the teacher analyzes that it is not effectively used. In this machine, we aimed to maximize the effect by decreasing the adverse effect by making Rs larger than before and lowering the power supply voltage to connect Rs.
Although it was originally using 2SK 214 (like), but after submitting the first part of the manuscript, FET for the driver arrived from ROHM, and the driver also suddenly changed to SiC. The model number of the SiC MOS FET for the driver is SCT21201AF. The effect of SiC conversion on the driver stage is phenomenal, music information has increased, expressive power has further improved.
The power supply voltage of the voltage amplification stage was +100 v / - 8 v in the No. 224, but it was +100 v / -100 v in this unit.
The specified transformer is TS - 180C, the winding of the power amplification stage is 44 V 7.8 A x 2. In No. 224, 0.33 Ω was inserted in the series to protect the SiC diode, but this 0.33 Ω was inserted even in No. 225, but UHC MOS for short-circuiting this resistor was added after startup .
When you look at the photos with parts mounted on the case, they are very compact.
It seems to be difficult in space when electrolytic capacitors are set to KMH etc. not specified. It is good that there is a case where the thermal resistance is a little more, there is room in the depth and the height. Because I can open a hole of φ 8 for heat dissipation of the board, this neighborhood seems to be an obstacle to me.
It is introduced that the distortion factor can be improved by changing the constant of the protection circuit of No. 224. In addition, by setting the voltage of the voltage amplification stage to +100 v / -100 v, Rs can be made to have a high resistance to further improve it.
DC Amplifier Series No.225
All FET configuration, 8 Ω load 180 W x 2, 4 Ω load 306 W x 2, SiC SBD rectified power supply
SiC MOS-FET High Power IVC [Part 2] Akihiko Kaneda
Details of ROHM's new SiC MOS-FET are announced. The model number is SCTMU001F.
This time it is used for the last stage SCT 2080KE drive, SCTMU001F also has a Pmax of 132 W, Idmax 40 A and it seems to be usable for the final stage of the power amplifier. At a later date, there may be deployment such as the final stage of the battery drive amplifier.
In the meaning of model number, SC stands for silicon carbide, T stands for DMOS-FET, MU for music, 001 for serial number, F means package TO 220AB.
Two types of board diagrams of 2SK 214 and SCTMU001F drivers are posted so that they can be selected considering the availability of parts. Although it is a slight difference, it is nice to be assembled without thinking about extra things.
Although it is a trial record, 2SK 214 drive power IVC is the same tendency as power IVC built in the previous DAC, so it is only for SiC driver. "There is no room to calmly judge the sound, it will be drawn into the music, all the musical tones are beautiful, elegant and artistic." In addition, Mr. Ikuo Tsunoda's listening notes are posted.
Next month will be a hybrid SiC power IVC plan.
DC Amplifier Series No.225
All FET configuration, 8 Ω load 180 W x 2, 4 Ω load 306 W, SiC rectified power supply
SiC MOS-FET High Power IVC [Part 1] Akihiko Kaneda
It is a system that improves the driver stage as expected. In No. 224 the distortion rate of 10 kHz was worse than that of 1 kHz. The reason for this is that in the source follower configuration of the driver stage, the Rs is too small, the charging current of the last stage Ciss flows to the Rs side, and the teacher analyzes that it is not effectively used. In this machine, we aimed to maximize the effect by decreasing the adverse effect by making Rs larger than before and lowering the power supply voltage to connect Rs.
Although it was originally using 2SK 214 (like), but after submitting the first part of the manuscript, FET for the driver arrived from ROHM, and the driver also suddenly changed to SiC. The model number of the SiC MOS FET for the driver is SCT21201AF. The effect of SiC conversion on the driver stage is phenomenal, music information has increased, expressive power has further improved.
The power supply voltage of the voltage amplification stage was +100 v / - 8 v in the No. 224, but it was +100 v / -100 v in this unit.
The specified transformer is TS - 180C, the winding of the power amplification stage is 44 V 7.8 A x 2. In No. 224, 0.33 Ω was inserted in the series to protect the SiC diode, but this 0.33 Ω was inserted even in No. 225, but UHC MOS for short-circuiting this resistor was added after startup .
When you look at the photos with parts mounted on the case, they are very compact.
It seems to be difficult in space when electrolytic capacitors are set to KMH etc. not specified. It is good that there is a case where the thermal resistance is a little more, there is room in the depth and the height. Because I can open a hole of φ 8 for heat dissipation of the board, this neighborhood seems to be an obstacle to me.
It is introduced that the distortion factor can be improved by changing the constant of the protection circuit of No. 224. In addition, by setting the voltage of the voltage amplification stage to +100 v / -100 v, Rs can be made to have a high resistance to further improve it.
DC Amplifier Series No.225
All FET configuration, 8 Ω load 180 W x 2, 4 Ω load 306 W x 2, SiC SBD rectified power supply
SiC MOS-FET High Power IVC [Part 2] Akihiko Kaneda
Details of ROHM's new SiC MOS-FET are announced. The model number is SCTMU001F.
This time it is used for the last stage SCT 2080KE drive, SCTMU001F also has a Pmax of 132 W, Idmax 40 A and it seems to be usable for the final stage of the power amplifier. At a later date, there may be deployment such as the final stage of the battery drive amplifier.
In the meaning of model number, SC stands for silicon carbide, T stands for DMOS-FET, MU for music, 001 for serial number, F means package TO 220AB.
Two types of board diagrams of 2SK 214 and SCTMU001F drivers are posted so that they can be selected considering the availability of parts. Although it is a slight difference, it is nice to be assembled without thinking about extra things.
Although it is a trial record, 2SK 214 drive power IVC is the same tendency as power IVC built in the previous DAC, so it is only for SiC driver. "There is no room to calmly judge the sound, it will be drawn into the music, all the musical tones are beautiful, elegant and artistic." In addition, Mr. Ikuo Tsunoda's listening notes are posted.
Next month will be a hybrid SiC power IVC plan.
"Il y a dans le dialogue une forme d'ouverture de soi à l'autre, et réciproquement, qu'on ne trouve pas dans le débat et la discussion." -Dominique Garand
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